Atomic structure and electronic properties of the cleavage InAs(110) surface

TL;DR

This paper investigates the electronic structure of the cleavage InAs(110) surface using a semi-empirical tight-binding approach, comparing theoretical models with experimental data to identify the most accurate atomic configuration.

Contribution

It introduces a semi-empirical tight-binding method to analyze the surface electronic properties of InAs(110) and compares various atomic models with experimental results.

Findings

Surface electronic band structure calculated as a function of surface parameters

Identification of the atomic model that best matches experimental data

Discussion of the electronic character of surface states

Abstract

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a function of the structural parameters of the surface. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. Finally, we discuss which atomic model better resembles the available experimental data.