Numerical Analysis of the Stub Transistor

TL;DR

This paper presents a simulation study of stub transistors, demonstrating how their conductance oscillates with stub voltage, which is relevant for future spintronics and quantum computing applications.

Contribution

It introduces a tight-binding model simulation of stub transistors, highlighting conductance oscillations with applied stub voltage.

Findings

Conductance oscillates with stub voltage

Single and double-gated stub transistors modeled

Potential applications in spintronics and quantum computing

Abstract

Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.