Gallium adsorption on (0001) GaN surfaces

TL;DR

This study combines experimental and theoretical methods to analyze gallium adsorption on GaN surfaces, providing insights into surface coverage, temperature effects, and cluster nucleation during the process.

Contribution

It introduces a comprehensive kinetic and ab initio model for Ga adsorption on GaN(0001), integrating experimental data with theoretical calculations.

Findings

Quantified Ga surface coverage as a function of flux

Analyzed temperature dependence of adsorption

Modeled nucleation of Ga clusters

Abstract

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.