Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors

TL;DR

This paper investigates how the interplay of Rashba spin-orbital interaction and space charge effects can significantly enhance spin injection efficiency in ferromagnet-insulator-semiconductor junctions, influenced by doping and charge screening.

Contribution

It demonstrates that the combined effects of Rashba interaction and Coulomb screening can greatly improve magnetoresistance in semiconductor spintronic devices.

Findings

Magnetoresistance can be enhanced through doping and charge screening.

Coordination between Rashba effect and Coulomb interaction influences spin transport.

Potential for improved spin injection in semiconductor devices.

Abstract

We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge screening in the semiconductor. In diffusion region, if the the resistance of the tunneling barriers is comparable to the semiconductor resistance, the magnetoresistance of this junction can be greatly enhanced under appropriate doping by the co-ordination between the Rashba effect and screened Coulomb interaction in the nonequilibrium transport processes within Hartree approximation.