A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields

TL;DR

This study explores the feasibility of creating a graphite-based field-effect transistor using boron nitride as a dielectric, but finds that low gate fields do not induce charge doping effects.

Contribution

The paper reports on the fabrication of a graphite FET with boron nitride dielectric and investigates the impact of low gate fields on charge doping.

Findings

No charge-doping effect observed at low gate fields

Boron nitride can serve as a gate dielectric for graphite

Limited electric field due to dielectric thickness

Abstract

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor based on graphite. A relatively thick layer of boron nitride turned out to be able to serve as a gate dielectric. This, however, limits the achievable electric gate field, which might be the reason for our observation of no charge-doping effect.