Electron-phonon interaction and coupled phonon--plasmon modes
L. Falkovsky

TL;DR
This paper develops a theoretical framework for Raman scattering in metals and doped semiconductors, accounting for electron-phonon interactions, Coulomb screening, and carrier effects, with calculations across different carrier concentrations.
Contribution
It introduces a comprehensive model incorporating Coulomb screening and deformation interactions, using a semiclassical dielectric function instead of Lindhard-Mermin, for better understanding of coupled phonon-plasmon modes.
Findings
Renormalized phonon frequencies due to carrier interactions
Dependence of Raman scattering on carrier concentration
Effect of electron-phonon coupling on optic mode coupling constants
Abstract
The theory of Raman scattering by the electron--phonon coupled system in metals and heavily doped semiconductors is developed taking into account the Coulomb screening and the electron--phonon deformation interaction. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The dependent semiclassical dielectric function is involved instead of the Lindhard-Mermin expression. The results of calculations are presented for various values of carrier concentration and electron-phonon coupling constant.
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