Properties and Curie Temperature (130 K) of Heavily Mn-doped Quaternary Alloy Ferromagnetic Semiconductor (InGaMn)As Grown on InP

TL;DR

This study reports on heavily Mn-doped (InGaMn)As thin films grown on InP with a high Curie temperature of 130 K, demonstrating homogeneous crystal quality and potential for spintronic applications.

Contribution

It presents the synthesis and magnetic characterization of heavily Mn-doped (InGaMn)As with high Curie temperature and no MnAs clustering, grown by low-temperature MBE.

Findings

High Curie temperature of 130 K observed.

No MnAs clustering in thin films.

Homogeneous single crystal quality achieved.

Abstract

We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed.