In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

TL;DR

This paper reports the successful growth and characterization of a narrow-gap ferromagnetic semiconductor alloy In(1-x)Mn(x)Sb, demonstrating ferromagnetic order with Curie temperatures up to 8.5 K, aligning with carrier-induced ferromagnetism models.

Contribution

It introduces a new ferromagnetic semiconductor alloy grown by low-temperature molecular beam epitaxy and confirms its ferromagnetic properties through multiple measurement techniques.

Findings

Ferromagnetic order confirmed by hysteresis loops and anomalous Hall effect.

Curie temperatures up to 8.5 K observed.

Results align with existing models of carrier-induced ferromagnetism.

Abstract

A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.