Analytical and Numerical Treatment of the Mott--Hubbard Insulator in Infinite Dimensions
Michael P. Eastwood (Univ. of California, La Jolla, CA, USA), Florian, Gebhard, Eva Kalinowski, Satoshi Nishimoto (Fachbereich Physik,, Philipps-Univ. Marburg, Germany), Reinhard M. Noack (Inst. f. Theoretische, Physik III, Univ. Stuttgart, Germany)

TL;DR
This paper combines analytical calculations and a new numerical scheme to study the Mott--Hubbard insulator in infinite dimensions, revealing the gap opening at a critical interaction strength and characterizing the density of states near the gap.
Contribution
It introduces a novel 'Fixed-Energy Exact Diagonalization' method for DMFT and provides analytical insights into the density of states and gap formation in the Hubbard model.
Findings
Gap opens at Uc=4.43 ± 0.05
Density of states near the gap increases as frequency^{1/2}
New numerical scheme corroborated by other approaches
Abstract
We calculate the density of states in the half-filled Hubbard model on a Bethe lattice with infinite connectivity. Based on our analytical results to second order in , we propose a new `Fixed-Energy Exact Diagonalization' scheme for the numerical study of the Dynamical Mean-Field Theory. Corroborated by results from the Random Dispersion Approximation, we find that the gap opens at . Moreover, the density of states near the gap increases algebraically as a function of frequency with an exponent in the insulating phase. We critically examine other analytical and numerical approaches and specify their merits and limitations when applied to the Mott--Hubbard insulator.
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