Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

TL;DR

This paper introduces a method to measure zero-field spin splitting in high mobility GaAs/AlGaAs devices using radiation-induced magnetoresistance oscillations, providing an alternative to traditional beat observation techniques.

Contribution

It presents a novel approach for characterizing zero-field spin splitting through analysis of radiation-induced oscillations, applicable when beats are not visible in Shubnikov-de Haas measurements.

Findings

Effective magnetic field evaluated from oscillation data

Method applicable to high mobility 2D electron systems

Provides a new tool for spin splitting characterization

Abstract

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.