On the Origin of Schottky Barriers in GaAs(110):Au contacts
T. C. G. Reusch, M. Wenderoth, L. Winking, N. Quaas, R. G. Ulbrich
TL;DR
This study uses scanning tunnelling spectroscopy to analyze the microscopic properties of GaAs(110):Au Schottky contacts, revealing detailed insights into the space charge layer and interface region at nanometer resolution.
Contribution
It provides the first detailed nanoscale investigation of the interface and space charge layer in GaAs:Au Schottky contacts using advanced spectroscopy.
Findings
Detailed characterization of the space charge layer.
Insights into the interface region at nanometer scale.
Enhanced understanding of Schottky barrier formation.
Abstract
Scanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor materials and interfaces · Surface and Thin Film Phenomena