Temperature Dependence of the Dielectric Constant and Resistivity of Diluted Magnetic Semiconductors

TL;DR

This study investigates how ferromagnetic order affects the dielectric constant and resistivity of Ga$_{1-x}$Mn$_x$As, revealing significant changes near the Curie temperature through theoretical modeling aligned with experimental data.

Contribution

It provides a theoretical analysis of temperature-dependent electrical properties of diluted magnetic semiconductors using advanced electronic structure and magnetic fluctuation models.

Findings

Thomas-Fermi length varies by about 8% across magnetic phases.

Resistivity changes by approximately 20% near the Curie temperature.

Fermi surface and scattering time variations explain resistivity changes.

Abstract

We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga$_{1-x}$Mn$_x$As. In our treatment the electronic structure of the semiconductor is described by a six band Kohn-Luttinger Hamiltonian, the thermal fluctuations of the Mn magnetic moments are treated in the mean field approximation, the carrier-carrier interaction within the random phase approximation, and the transport properties using the relaxation time approximation. We find that the Thomas-Fermi length changes near 8% when going from the ferromagnetic to the paramagnetic phase. We also find, in good agreement with the experiments, that the resistivity changes near 20% when going from zero to the Curie temperature. We explain this change in the resistivity in terms of the variation of the Fermi surface and the transport scattering time when going from the ferromagnetic phase to the paramagnetic phase.