DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors

TL;DR

This paper investigates the dc transport properties of (Ga,Mn)As ferromagnetic semiconductors, combining experimental measurements with theoretical modeling to understand the influence of magnetic states on conductivity and Hall effects.

Contribution

It provides a detailed theoretical and experimental analysis of dc transport in (Ga,Mn)As, revealing a quantitative understanding of magneto-transport effects in this ferromagnetic semiconductor.

Findings

Strong sensitivity of conductivity tensor components to magnetic state

Good agreement between theoretical model and experimental data

Quantitative insights into dc magneto-transport effects

Abstract

We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. This quantitative understanding of dc magneto-transport effects in (Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.