Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

TL;DR

This study systematically examines the relationships between Mn atom incorporation, ionization, and hole concentrations in p-(Ga,Mn)As epilayers, providing new insights into their electronic properties and the anomalous Hall effect at room temperature.

Contribution

It offers the first quantitative assessment of the anomalous Hall effect in p-(Ga,Mn)As at room temperature and compares Mn incorporation, ionization, and hole concentrations across a wide doping range.

Findings

Ionized Mn acceptors correlate with Mn atom incorporation.

Hole concentrations vary with Mn doping levels.

Anomalous Hall effect is quantitatively characterized at room temperature.

Abstract

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.