Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

TL;DR

This study uses magnetocapacitance measurements in tilted magnetic fields to directly measure the spin and cyclotron energy gaps in a silicon-based 2D electron system, revealing key electronic properties.

Contribution

It provides direct experimental determination of the chemical potential jumps and effective parameters in a strongly correlated 2D electron system in silicon, highlighting the behavior of the g-factor and effective mass.

Findings

g-factor close to bulk silicon value

cyclotron splitting indicates strongly enhanced effective mass at low densities

chemical potential jumps measured across spin and cyclotron gaps

Abstract

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.