Ferroelectric YMnO3 films deposited on n-type Si (111) substrates

TL;DR

This study reports the growth and characterization of ferroelectric YMnO3 films on n-type Si substrates, highlighting their electrical properties, interface state behavior, and conduction mechanisms relevant for device applications.

Contribution

It introduces a method for depositing YMnO3 films on silicon and analyzes their ferroelectric and electrical properties in a device-relevant configuration.

Findings

Hysteretic C-V behavior indicating polarization switching

Memory window decreases with temperature

Lower leakage current in well-crystallized films

Abstract

YMnO3 thin films have been grown on n - type Si substrates by nebulized spray pyrolysis in the Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of interface states decreases with the increase in the annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current measured in the accumulation region, is lower in well-crystallized thin films and obeys a space- charge limited conduction mechanism.