The Full Mottness
Tudor D. Stanescu, Philip Phillips

TL;DR
This paper investigates the intrinsic strongly correlated physics of doped Mott insulators using a 2D Hubbard model, revealing pseudogap formation, Fermi surface anomalies, and Hall coefficient sign changes linked to Mott physics.
Contribution
It introduces a non-perturbative, local physics-based approach with a two-site dynamical cluster expansion to analyze doping effects in the Hubbard model.
Findings
Spectral gap of order U at half-filling without quasiparticles
Fermi surface exceeds Luttinger volume upon doping
Pseudogap opens in underdoped regime and closes above optimal doping
Abstract
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the 2D Hubbard model. Because the charge gap arises from on-site correlations, we implement a non-perturbative approach which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbour energy scale, . At half-filling, we find that the spectral function possesses a gap of order and is devoid of any coherent quasi-particle peaks. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. Additionally in the underdoped regime, we find that a pseudogap opens in the single particle density of states.The pseudogap…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
