Tight-binding g-Factor Calculations of CdSe Nanostructures
Joshua Schrier, K. Birgitta Whaley

TL;DR
This study uses semiempirical tight-binding calculations to analyze the g-factors of CdSe nanostructures, revealing shape-dependent transitions and anisotropy effects that align with experimental observations.
Contribution
It introduces a detailed method for calculating g-factors in CdSe nanocrystals, highlighting the shape dependence and transition phenomena not previously characterized.
Findings
g-factors are size-independent in near-spherical dots
Shape extension causes a transition from anisotropic to isotropic g-factors
Surface details influence g-factor values in small systems
Abstract
The Lande g-factors for CdSe quantum dots and rods are investigated within the framework of the semiempirical tight-binding method. We describe methods for treating both the n-doped and neutral nanostructures, and then apply these to a selection of nanocrystals of variable size and shape, focusing on approximately spherical dots and rods of differing aspect ratio. For the negatively charged n-doped systems, we observe that the g-factors for near-spherical CdSe dots are approximately independent of size, but show strong shape dependence as one axis of the quantum dot is extended to form rod-like structures. In particular, there is a discontinuity in the magnitude of g-factor and a transition from anisotropic to isotropic g-factor tensor at aspect ratio ~1.3. For the neutral systems, we analyze the electron g-factor of both the conduction and valence band electrons. We find that the…
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