Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
E. Tutuc, S. Melinte, E.P. De Poortere, M. Shayegan, R. Winkler

TL;DR
This paper investigates how finite layer thickness affects spin-polarization in dilute 2D GaAs electron systems under strong parallel magnetic fields, combining measurements and calculations.
Contribution
It introduces the significant impact of non-zero electron layer thickness on spin-polarization, energy surface deformation, and effective parameters in 2D GaAs systems.
Findings
Layer thickness causes energy surface deformation.
Enhanced effective mass and g-factor observed.
Spin-polarization exhibits non-linear behavior with field.
Abstract
We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
