Unconventional magnetoresistance in long InSb nanowires

TL;DR

This study investigates the unusual magnetoresistance in long InSb nanowires, revealing a novel mechanism involving magnetic-field-induced breaking of spin-charge separation, with significant effects on electrical conduction at various temperatures.

Contribution

It demonstrates a new mechanism of magnetoresistance in InSb nanowires caused by magnetic-field-induced breaking of spin-charge separation, expanding understanding of quantum effects in nanostructures.

Findings

Magnetoresistance causes a 20% increase in power-law exponents at 10 T.

Zero-field conduction follows power laws typical for 1D electron systems.

Magnetic field induces breaking of spin-charge separation, affecting conduction.

Abstract

Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^\alpha$, $I\propto V^\beta$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $\alpha$, $\beta$ at H=10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.