Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
J. M. Elzerman, R. Hanson, J. S. Greidanus, L. H. Willems van Beveren,, S. De Franceschi, L. M. K. Vandersypen, S. Tarucha, and L. P. Kouwenhoven

TL;DR
This paper demonstrates a double quantum dot system in GaAs/AlGaAs capable of detecting few-electron states and manipulating electrons with microwave radiation, paving the way for scalable spin-qubits.
Contribution
It introduces a few-electron double quantum dot with integrated charge sensors and demonstrates photon-assisted electron transfer, advancing quantum dot qubit technology.
Findings
Charge detection of few-electron states using QPCs
Electron transfer between dots via microwave photons
Potential for scalable spin-qubit implementation
Abstract
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.
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