Symmetry of anisotropic exchange interactions in semiconductor nanostructures

TL;DR

This paper analyzes the symmetry properties of exchange interactions in semiconductor nanostructures, revealing a universal form of the exchange Hamiltonian and independence of anisotropic exchange strength from binding energy.

Contribution

It introduces a universal expression for the exchange Hamiltonian in semiconductor nanostructures using pseudospin operators, highlighting the independence of anisotropic exchange strength from binding energy.

Findings

Exchange Hamiltonian can be universally expressed via pseudospin operators.

Anisotropic exchange strength is independent of binding energy.

The symmetry analysis applies to charge carriers in quantum wells and dots.

Abstract

The symmetry of exchange interaction of charge carriers in semiconductor nanostructures (quantum wells and quantum dots) is analysed. It is shown that the exchange Hamiltonian of two particles belonging to the same energy band can be universally expressed via pseudospin operators of the particles. The relative strength of the anisotropic exchange interaction is shown to be independent of the binding energy and the isotropic exchange constant.