Under-doped La2-xSrxCuO4 with x = 0.063 - 0.125: TSFZ growth of high-quality crystals and anomalous doping dependences of superconducting properties

TL;DR

This study successfully grew high-quality under-doped La2-xSrxCuO4 crystals using TSFZ technique and observed anomalous doping-dependent superconducting properties near specific doping levels, suggesting intrinsic electronic effects.

Contribution

First demonstration of high-quality LSCO crystals with precise doping via TSFZ and identification of doping anomalies in superconducting behavior.

Findings

Crystals are large, high-quality, and free of defects.

Superconducting transition width and volume fraction show anomalies near specific doping levels.

Anomalies are attributed to intrinsic electronic effects.

Abstract

A series of high-quality La2-xSrxCuO4 (LSCO) superconductor crystals in the under-doping region with x = 0.063, 0.07, 0.09, 0.10, 0.111 and 0.125 has been successfully prepared by traveling-solvent floating-zone (TSFZ) technique. The crystals are large and free of sub-grains and foreign phases. The high crystal quality has been revealed by double-crystal x-ray rocking curves and Rutherford backscattering spectrometry combined with ion-beam channeling effect. We find that the evolutions of the superconducting transition width and volume fraction as a function of carrier concentration exhibit interesting anomalies in the vicinity of some magic number doping levels such as x =1/4^2 (=0.0625) and 1/3^2 (=0.111). We argue that these behaviours are of intrinsic electronic origin.