Electronic and Optical Properties of ZnIn$_2$Te$_4$

TL;DR

This study investigates the electronic and optical properties of the semiconductor ZnIn$_2$Te$_4$ using first-principles calculations, confirming its direct band gap and analyzing its dielectric response.

Contribution

The paper provides a detailed theoretical analysis of ZnIn$_2$Te$_4$'s band structure and optical properties, confirming experimental band gap values and exploring dielectric functions.

Findings

ZnIn$_2$Te$_4$ is a direct-gap semiconductor with a 1.40 eV band gap.

Distinct structures in dielectric function at critical points.

Theoretical results align with experimental measurements.

Abstract

Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn$_2$Te$_4$ have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn$_2$Te$_4$ is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function $\epsilon(E) = \epsilon_1(E) + i\epsilon_2(E)$ reveal distinct structures at energies of the critical points in the Brillouin zone.