Anisotropic Magnetoresistance in GaMnAs films
K.Y. Wang, K.W. Edmonds, R.P. Campion, L.X. Zhao, A.C. Neumann, C.T., Foxon, B.L. Gallagher, and P.C. Main
TL;DR
This study investigates how anisotropic magnetoresistance varies with Mn content in GaMnAs films, revealing that increased Mn leads to higher magnetic disorder and stronger magneto-crystalline anisotropy.
Contribution
It provides experimental measurements of anisotropic magnetoresistance in GaMnAs films across different Mn concentrations and orientations.
Findings
Magnetoresistance decreases as Mn content increases.
Magneto-crystalline anisotropy increases with Mn concentration.
Magnetic disorder and defect scattering rise with more Mn.
Abstract
The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.
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Taxonomy
TopicsMagnetic properties of thin films · ZnO doping and properties · Magnetic Properties and Applications