Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

TL;DR

This study investigates the energy structure of 2D holes in p-type AlGaAs/GaAs heterostructures under magnetic fields using photoluminescence, revealing complex spectra and the influence of many-body effects.

Contribution

It introduces a new numerical method for calculating valence-subband Landau levels and compares these with experimental photoluminescence spectra in heterostructures.

Findings

Good agreement between calculated Landau levels and experimental spectra.

Identification of excitonic transitions in the photoluminescence spectra.

Observation of many-body effects influencing the spectra.

Abstract

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.