Spin Current Generation and Detection in the Presence of AC Gate

TL;DR

This paper proposes a purely electrical method to generate and detect spin currents in semiconductor quantum wells using a time-dependent gate to modulate Rashba spin-orbit coupling, avoiding optical or magnetic techniques.

Contribution

It introduces a novel all-electric approach for spin current generation and detection in semiconductor nanostructures, emphasizing practical implementation without optical or magnetic components.

Findings

Predicts observable spin currents in narrow gap III-V semiconductors

Suggests voltage measurement on the gate as a detection method

Discusses rectification of AC spin currents

Abstract

We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas carrying a time dependent spin current. Both the generation and detection do not involve any optical or magnetic mediators.