On Effective Electron Mass of Silicon MOSFET at Low Electron Density

TL;DR

This paper investigates how the effective electron mass and g factor vary with electron density in a dilute silicon MOSFET, revealing a divergence in effective mass at a critical density while the g factor stays finite.

Contribution

It adapts the trial wave function method to analyze density dependence of effective mass and g factor in 2D electron systems, highlighting a divergence in effective mass.

Findings

Effective mass tends to diverge at a critical electron density.

The g factor remains finite across the density range.

Method adapts existing wave function techniques for 2D electron systems.

Abstract

The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the $g$ factor remains finite.