All-optical single-electron read-out devices based on GaN quantum dots

TL;DR

This paper investigates GaN quantum dots for all-optical single-electron read-out devices, emphasizing the role of built-in fields in enhancing particle interactions and introducing a semi-analytical model for rapid interaction estimation.

Contribution

It presents a semi-analytical model for estimating particle interactions in GaN quantum dots, aiding the design of optical charge read-out devices with high accuracy.

Findings

Semi-analytical model predicts interactions within 10% of exact results.

Built-in fields in GaN quantum dots reinforce dipole interactions.

Device design enables monitoring of quantum dot charge states.

Abstract

We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model which allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to ``exact'' results. We apply our study to the design of an all-optical read-out device which exploits long-range dipole-monopole interactions and may be also used to monitor the charge status of a quantum dot system.