Current induced magnetization switching in magnetic tunnel junctions
Z. F. Lin, S. T. Chui, L. B. Hu

TL;DR
This paper proposes a new mechanism for current-induced magnetization switching in magnetic tunnel junctions, emphasizing electron-electron interactions, which could lead to more efficient spin switching effects compared to traditional multilayer structures.
Contribution
It introduces a novel theoretical mechanism involving electron-electron interactions for magnetization switching in tunnel junctions, supported by experimental evidence.
Findings
Enhanced spin switching effect in tunnel structures
Normalized switching effect exceeds that in multilayers
Experimental results support the new mechanism
Abstract
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel structures the possibility of an enhanced spin switching effect that, when normalized with respect to the current, is much bigger than that in multilayers. Some recent experimental results show evidence for the present picture.
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Taxonomy
TopicsMagnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Physics of Superconductivity and Magnetism
