Possible Jahn-Teller effect in Si-inverse layers
S. Brener, S. V. Iordanski, A. Kashuba
TL;DR
This paper investigates the potential Jahn-Teller effect in silicon inverse layers under quantum Hall conditions, revealing phase transitions and anisotropy effects due to lattice deformation and Coulomb interactions.
Contribution
It introduces a theoretical analysis of Jahn-Teller effects in Si(100) MOSFETs with SU(4) symmetry, identifying phase states and anisotropy energies.
Findings
Identification of three magnetic phases: ferromagnetic, canted antiferromagnetic, and spin-singlet.
Calculation of anisotropy energy for charged skyrmions in different phases.
Demonstration of lattice deformation effects on valley degeneracy and magnetic properties.
Abstract
Jahn-Teller effect in bivalley Si(100) MOSFET under conditions of quantum Hall effect at integer filling factors nu=1,2,3 is studied. This system is described by SU(4) hidden symmetry. At nu=2 static and dynamic lattice deformation creates an easy-plane anisotropy and antiferromagnetic exchange and lifts the valley degeneracy. At nu=1,3 Coulomb interaction is essential to produce weak easy-plane anisotropy. Three phases: ferromagnetic, canted antiferromagnetic and spin-singlet, have been found. Anisotropy energy of charged skyrmion excitation in every phase is found.
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