Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates

TL;DR

This study investigates how doping affects the chemical potential and entropy in high-Tc cuprates, revealing different behaviors between hole and electron doping and highlighting the role of magnetic correlations.

Contribution

It models thermodynamic properties of cuprates using the t-t'-t''-J model, reproducing experimental chemical potential shifts and analyzing entropy differences.

Findings

Chemical potential varies differently with doping in hole vs. electron-doped cuprates.

Electron-doped systems have lower entropy than hole-doped ones.

Strong antiferromagnetic correlations influence entropy and doping dependence.

Abstract

We examine the thermodynamic properties of the hole- and electron-doped cuprates by using the t-t'-t''-J model. We find that the chemical potential shows different doping dependence between the hole and electron dopings. Recent experimental data of the chemical potential shift are reproduced except for lightly underdoped region in the hole doping where stripe and/or charge inhomogeneity are expected to be important. The entropy is also calculated as a function of the carrier concentration. It is found that the entropy of the electron-doped system is smaller than that of the hole-doped systems. This is related to strong antiferromagnetic short-range correlation that survives in the electron-doped system.