Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

TL;DR

This paper reports the fabrication and characterization of rubrene single-crystal OFETs with parylene gate insulators, demonstrating p-type conductivity, high mobility, and discussing temperature effects.

Contribution

It introduces a novel fabrication of rubrene single-crystal OFETs using parylene as the gate insulator, achieving high mobility and good on/off ratios.

Findings

Mobility up to 1 cm^2/Vs at room temperature

On/off ratio around 10^4

Temperature dependence of mobility analyzed

Abstract

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.