Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

TL;DR

This paper investigates the tip-gating effect in scanning impedance microscopy of nanoelectronic devices, revealing how probe potential influences imaging modes and defect visibility in carbon nanotubes.

Contribution

It introduces a detailed analysis of tip-gating effects in SIM, demonstrating how probe potential controls invasive and non-invasive imaging modes and defect detection.

Findings

High-resolution defect imaging achieved with tip-gating

Weak defects observable near strong defects due to tip-gating

Imaging mechanism of tip-gating SIM discussed

Abstract

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.