TiN Films Deposited by Laser CVD: A Growth Kinetics Study

TL;DR

This study investigates the growth kinetics of titanium nitride (TiN) films deposited on steel substrates using laser chemical vapor deposition, analyzing composition, structure, and growth rates to understand the underlying mechanisms.

Contribution

It provides detailed growth rate data and identifies mass transport in vapor phase as the controlling mechanism during TiN film deposition via LCVD.

Findings

Growth rates ranged from 3.7 to 6.9 micrometers per second.

An apparent activation energy of 46.9 kJ/mol was determined.

Deposition is controlled by vapor phase mass transport.

Abstract

Results on the chemical composition, structure and growth kinetics of titanium nitride (TiN) films deposited on mild steel substrates by pyrolytic laser-induced chemical vapour deposition (LCVD) are presented. Golden coloured lines of TiN were deposited from a reactive gas mixture of TiCl4, N2 and H2 using a continuous wave TEM00 CO2 laser beam as heat source. The chemical composition and structure of the films were determined by electron probe microanalysis (EPMA) and glancing incidence X-ray diffraction (GIXRD). A non-contact laser profilometer was used to measure the thickness profiles of the films. Using the data obtained in the steady-state region of the TiN laser-written lines, growth rates in the range 3.7 to 6.9 micrometers per second were deduced. The Arrhenius relation between the deposition rate and the deposition temperature yields an apparent activation energy of 46.9(+-)3.8 kJ.mol-1. This result enabled us to conclude that under our deposition conditions the LCVD of TiN is controlled by mass transport in the vapour phase. Keywords: Coatings; Titanium nitride (TiN); Laser chemical vapour deposition (LCVD); Growth mechanisms.