Frustration of the interlayer coupling by mobile holes in La2-xSrxCuO4 (x<0.02)
M. Hucker, H.-H. Klauss, B. Buchner
TL;DR
This study investigates how mobile holes in La2-xSrxCuO4 influence the interlayer magnetic coupling, revealing that only mobile holes significantly frustrate this coupling in the antiferromagnetic phase.
Contribution
It demonstrates that hole mobility, rather than hole concentration alone, critically affects interlayer coupling in La2-xSrxCuO4, highlighting the role of mobile holes in magnetic frustration.
Findings
Interlayer coupling varies with hole mobility.
Mobile holes cause strong frustration of interlayer coupling.
Hole concentration alone does not determine coupling strength.
Abstract
We have studied the interlayer coupling in the antiferromagnetic (AF) phase of Sr and Zn doped La2CuO4 by analyzing the spin flip transition in the magnetization curves. We find that the interlayer coupling strongly depends on the mobility of the hole charge carriers. Samples with the same hole content as well as the same Neel temperature but a different hole mobility, which we adjusted by Zn co-doping, can have a very different interlayer coupling. Our results suggest that only mobile holes can cause a strong frustration of the interlayer coupling.
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