Stabilization of magnetic polarons in antiferromagnetic semiconductors by extended spin distortions

TL;DR

This paper analytically investigates how extended spin distortions around magnetic polarons in antiferromagnetic semiconductors enhance their stability and introduce a new length scale, providing insights into magnetic structure interactions.

Contribution

It presents an analytical solution for magnetic distortions caused by charge carriers in antiferromagnetic semiconductors, revealing extended distortions increase ferron stability.

Findings

Distortions extend beyond the charge trapping region.

Extended distortions enhance ferron stability.

A new length scale characterizes the magnetic structure.

Abstract

We study the problem of a magnetic polaron in an antiferromagnetic semiconductor (ferron). We obtain an analytical solution for the distortion produced in the magnetic structure of the d-spins due to the presence of a charge carrier bound to an impurity. The region in which the charge carrier is trapped is of the order of the lattice constant (small ferron) but the distortion of the magnetic structure extends over much larger distance. It is shown that the presence of this distortion makes the ferron more stable, and introduces a new length scale in the problem.