In-situ growth of superconducting MgB2 thin films by molecular beam epitaxy
K Ueda, M. Naito
TL;DR
This paper investigates the in-situ growth of superconducting MgB2 thin films via molecular beam epitaxy, exploring various growth parameters to optimize film quality for electronic applications.
Contribution
It provides a comprehensive analysis of growth conditions affecting MgB2 film quality, offering practical guidance for high-quality superconducting film fabrication.
Findings
Optimal growth temperature identified
Excess Mg improves film superconductivity
Residual gases impact film quality
Abstract
The in-situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in-situ annealing, (5) thickness dependence and (6) the effect of substrates. Our results provide a guide to the preparation of high-quality superconducting MgB2 films for potential electronics applications.
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