Origin of the efficient light emission from inversion domain boundaries in GaN

TL;DR

This paper explains why inversion domain boundaries in GaN emit light efficiently, using ab initio calculations and a polarization-based model, revealing their role as rectifying junctions under voltage.

Contribution

It provides a theoretical explanation for the high efficiency of light emission from GaN inversion domain boundaries, combining ab initio calculations with a polarization-based model.

Findings

Inversion domain boundaries act as efficient recombination centers.

Domain boundaries behave as rectifying junctions under voltage.

Polarization in GaN influences domain boundary behavior.

Abstract

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.