Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

TL;DR

This paper reports a giant planar Hall effect in epitaxial (Ga,Mn)As devices, enabling highly sensitive magnetic measurements and providing insights into magnetic anisotropy, with results significantly exceeding previous observations in metallic ferromagnets.

Contribution

The study demonstrates a giant planar Hall effect in (Ga,Mn)As, vastly larger than prior reports, facilitating advanced magnetic property analysis.

Findings

Giant planar Hall effect observed in (Ga,Mn)As

Hall resistance jumps are four orders of magnitude larger than in metallic ferromagnets

Magnetic anisotropy fields align with theoretical models

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.