Theory for Slightly Doped Antiferromagnetic Mott Insulators
T. K. Lee, Chang-Ming Ho, Naoto Nagaosa, Wei-Cheng Lee

TL;DR
This paper proposes trial wavefunctions for slightly doped antiferromagnetic Mott insulators, capturing low-energy states with charged quasiparticles and small Fermi patches, aligning with experimental observations in high-Tc cuprates.
Contribution
It introduces explicit trial wavefunctions based on the 2D Mott insulator state to describe doped systems, highlighting less pairing and Fermi patches consistent with experiments.
Findings
Wavefunctions reproduce exact calculation results.
States exhibit small Fermi patches observed experimentally.
Less pairing correlations than previous models.
Abstract
Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With the state behaving like charged quasi-particles with well-defined momenta, a rigid band is observed. These states have much less pairing correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high Tc cuprates doped lightly with holes or electrons. States showing the incoherent and spin-bag behaviors are also discussed. Using these wavefunctions, a number of results obtained by exact calculations are reproduced.
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