Magnetotransport properties of a polarization-doped three-dimensional electron slab

TL;DR

This study investigates magnetotransport phenomena in a polarization-doped three-dimensional electron slab within an AlGaN system, revealing strong quantum oscillations and providing insights into effective mass and scattering mechanisms.

Contribution

It introduces a novel polarization doping technique in AlGaN that enables detailed magnetotransport analysis of a 3D electron system, including effective mass and scattering parameters.

Findings

Observation of strong Shubnikov-de-Haas oscillations

Determination of effective mass as 0.19 m0

Extraction of alloy scattering parameter V0=1.8 eV

Abstract

We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al$_{x}$Ga$_{1-x}$N semiconductor system. The degenerate free carriers are generated by a novel technique by grading a polar alloy semiconductor with spatially changing polarization. Analysis of the magnetotransport data enables us to extract an effective mass of $m^{\star}=0.19 m_{0}$ and a quantum scattering time of $\tau_{q}= 0.3 ps$. Analysis of scattering processes helps us extract an alloy scattering parameter for the Al$_{x}$Ga$_{1-x}$N material system to be $V_{0}=1.8eV$.