On the quantum and classical scattering times due to charged dislocations in an impure electron gas

TL;DR

This paper derives and compares the ratio of transport to single-particle relaxation times in 2D and 3D electron gases caused by charged dislocations, highlighting differences from impurity scattering.

Contribution

It provides a theoretical derivation of relaxation time ratios due to charged dislocations and compares them with impurity scattering in semiconductors.

Findings

The ratio of relaxation times is larger for dislocation scattering than impurity scattering.

Results apply to both two-dimensional and three-dimensional electron gases.

Charged dislocations significantly influence electron transport properties.

Abstract

We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both three and two-dimensional electron transport.