Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures

TL;DR

This paper reanalyzes experimental data near the metal-insulator transition in two-dimensional systems, suggesting the transition may persist at finite temperatures, but further experiments are needed for confirmation.

Contribution

It proposes that the metal-insulator transition could exist at finite temperatures based on reanalysis of existing resistivity data, challenging the conventional understanding.

Findings

Resistivity curves show an offset near the transition point.

The offset suggests the MIT may persist at finite temperatures.

Further detailed experiments are necessary for confirmation.

Abstract

For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by Papadakis and Shayegan are reanalyzed. In both cases, the rho(T=const.,n) curves for various values of the temperature T seem to exhibit an offset concerning n, where the related resistivity is close to h/e^2. This offset may result from a peculiarity in rho(T=const.,n) indicating the MIT to be present also at finite T. More detailed experiments are imperative.