Shot Noise in Tunneling through a Quantum Dot Array
G. Kiesslich, A. Wacker, E. Schoell, A. Nauen, F. Hohls, R.J. Haug

TL;DR
This paper investigates shot noise suppression in a quantum dot array, combining experimental measurements and theoretical modeling to understand non-monotonic Fano factor behavior related to tunneling through quantum dot states.
Contribution
It provides a combined experimental and theoretical analysis of shot noise in quantum dot arrays, highlighting non-monotonic Fano factor dependence on bias voltage.
Findings
Non-monotonic Fano factor dependence observed
Master equation model reproduces behavior qualitatively
Shot noise suppression linked to quantum dot states
Abstract
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Cold Atom Physics and Bose-Einstein Condensates
