Phase control in La-214 epitaxial thin films
M. Naito, A. Tsukada, T. Greibe, H. Sato

TL;DR
This study demonstrates the controlled stabilization of T and T' phases in La2CuO4 thin films via substrate choice and growth temperature, and explores doping effects, including superconductivity in electron-doped T' phase.
Contribution
It reveals how growth parameters influence phase stabilization in La2CuO4 thin films and reports novel doping behaviors, including electron doping in the T phase and superconductivity in T'-phase films.
Findings
T' phase stabilized at low temperatures and specific substrate lattice constants.
Electron doping in T-La2CuO4 is possible up to x ~ 0.08 without superconductivity.
Superconductivity observed in electron-doped T'-La2CuO4 with Tc ~ 30 K.
Abstract
The lanthanide (Ln) copper oxides of the general chemical formula Ln2CuO4 take two different crystal structures: K2NiF4(T) and Nd2CuO4(T'). La2CuO4 takes the T structure by high-temperature bulk processes. The "thermal expansion mismatch" between the La-O and Cu-O bonds predicts that the T' phase of La2CuO4 can be stabilized at synthesis temperatures below 425 deg. Such low synthesis temperatures are difficult to access by bulk processes, but easy by thin-film processes. We have surveyed growth parameters in molecular beam epitaxy, and succeeded in the selective stabilization of T- and T'-La2CuO4. From our observations, it turns out that the growth temperature as well as the substrate play a crucial role in the selective stabilization: the T' structure is stabilized at low growth temperatures (< 600 deg.) and with substrates of a < 3.70 Ang or a > 3.90 Ang, while the T structure is…
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