Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs
K W Edmonds, R P Campion, K-Y Wang, A C Neumann, B L Gallagher, C T, Foxon, P C Main
TL;DR
This paper investigates the anomalous Hall effect in GaMnAs thin films, revealing a quadratic relationship with resistivity consistent with Berry phase theories, enhancing understanding of magnetic transport in dilute magnetic semiconductors.
Contribution
It provides experimental evidence supporting Berry phase theories for the anomalous Hall effect in GaMnAs, a dilute magnetic semiconductor.
Findings
Quadratic dependence of anomalous Hall resistance on resistivity.
Agreement with Berry phase theoretical predictions.
Analysis across different Mn concentrations.
Abstract
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.
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