Does $m^*g^*$ diverge at a finite electron density in silicon inversion layers?

TL;DR

This paper discusses whether the product of the effective g-factor and effective mass in silicon inversion layers diverges at a finite electron density, analyzing conflicting experimental results from magnetotransport and Shubnikov-de Haas measurements.

Contribution

The paper reviews experimental evidence and discrepancies regarding the divergence of g*m* at a critical density in silicon 2D electron systems.

Findings

Magnetoconductivity shows critical behavior at finite density

Discrepancies exist between different experimental methods

The divergence of g*m* remains debated

Abstract

For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Land\'e $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direct determinations of the $g^*m^*$ obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.