Core-level spectroscopy of Si/SiO_2 quantum wells: evidence for confined states

TL;DR

This study combines experimental spectroscopy and theoretical modeling to demonstrate electron confinement in Si/SiO_2 quantum wells, revealing shifts in conduction states that influence their optical properties.

Contribution

It provides the first clear evidence of conduction state confinement in Si/SiO_2 quantum wells through combined experimental and first-principles analysis.

Findings

Conduction band minimum shifts to higher energy in quantum wells.

Higher energy conduction states remain unshifted.

Confinement effects influence optical emission properties.

Abstract

We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are compared with the bulk silicon spectrum. In the Si quantum wells, it is found that the conduction band minimum and the low-lying peaks undergo a blue shift while all higher peaks remain unshifted. The experimental results are supported by calculations using recent first-principles structural models for Si/SiO_2 superlattices. The experimental results suggest that all conduction states up to a given conduction band offset become confined and blue-shifted while those at higher energies are not confined and undergo no shift. These results provide unambiguous evidence that the visible-light emitting properties of Si/SiO_2 structures depend strongly on electron confinement effects.