Study on the Kondo effect in the tunneling phenomena through a quantum dot
Osamu Sakai, Wataru Izumida

TL;DR
This paper reviews recent theoretical and numerical studies on the Kondo effect in electron tunneling through quantum dots, analyzing conductance behavior in different electron occupation scenarios.
Contribution
It introduces numerical methods for calculating tunneling conductance and analyzes the Kondo effect in both odd and even electron occupation cases in quantum dots.
Findings
Numerical methods successfully calculate tunneling conductance.
Analysis of Kondo effect in odd-electron occupation aligns with experimental data.
Theoretical examination of tunneling anomalies in even-electron occupation related to spin transitions.
Abstract
We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd number occupy the dot is studied, and experimental results are analyzed based on the calculated result. Tunneling anomaly in the even-number-electron occupation case, which is recently observed in experiment and is ascribed to the Kondo effect in the spin singlet-triplet cross over transition region, is also examined theoretically.
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